Effect of neutral gas heating in argon radio frequency inductively coupled plasma

Direct measurement of neutral gas heating in a radio-frequency electrothermal plasma micro-thruster

Argon Ion and Neutral Metastable Levels Destruction in a Magnetically Enhanced Inductively Coupled Plasma Reactor

This paper deals with pure argon plasma studied in a magnetically enhanced inductively coupled reactor. Laser induced fluorescence technique was performed with an optical parametric oscillator laser on the 3d 4F7/2 and 3d 2G9/2 Ar + metastable levels and on the (2P3/2 0 )4s neutral metastable state to determine their relative densities. Langmuir probe was used as a complementary diagnostic to m...

Model for noncollisional heating in inductively coupled plasma processing sources

Low pressure ~,10 mTorr! inductively coupled plasma sources are being developed for etching and deposition of semiconductors and metals. In models for these devices, plasma dynamics are typically coupled to the electromagnetic fields through Ohm’s law, which implies that collisional heating is the dominant power transfer mechanism. In this article, we describe an algorithm to couple plasma dyna...

Electron energy distribution function measurements and plasma parameters in inductively coupled argon plasma

Electron energy distribution functions (EEDFs) have been measured in a cylindrical inductively coupled plasma (ICP) with a planar coil over a wide range of external parameters (argon pressure, discharge power and driving frequency). The measurements were performed under well-defined discharge conditions (discharge geometry, rf power absorbed by plasma, external electrical characteristics and el...

Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas

We present and discuss results obtained in studies of the mechanisms underlying various feature size dependencies of SiO2 etching in inductively coupled fluorocarbon plasmas. The variation of the fluorocarbon deposition rate and the SiO2 etch rate with both feature size and rf bias power has been measured in a variety of constant aspect ratio features for both an etch stop (C3F6 /H2) and a none...